- Артикул
- 2N7002E-T1-GE3
- Направление
- Электронные компоненты
- Производитель
- Vishay
- Категория
- MOSFET-транзисторы
- Product name
- 2N7002E-T1-GE3
- Product classification
- MOSFET
- Lifecycle Status
- Obsolete
- RoHS
- RoHS
- Field-effect transistor type
- N-CH
- Technology System
- MOSFET(Metal Oxide)
- Package
- TO-236-3|SC-59|SOT-23-3
- Drain to Source voltage
- 60V
- Continuous drain current
- 240mA
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Drain to Source on-state resistance
- 3Ohm
- Vgs(th)
- 2.5 V
- Gate Charge (Qg)
- 0.6nC
- Vgs (Max)
- 20V
- Input Capacitance (Ciss)
- 21pF
- Power consumption
- 350mW
- Operating temperature range
- -55 to 150C
- Other names
- 2N7002E-T1-GE3TR | 2N7002E-T1-GE3-ND | 2N7002E-T1-GE3CT | 2N7002E-T1-GE3DKR
- Type
- Power MOSFET
- Related Products
- Successor type
- We handle successor products
- If you find an error in the product information, please let us know
